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Browsing by Subject "(111)SI"

Browsing by Subject "(111)SI"

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  • Kazan M.; Tabbal M.; Masri P. (LAUSANNEPO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2012)
    Several amounts of germanium (Ge) have been deposited at the interface between cubic phase silicon carbide (3C-SiC) thin films and silicon (Si) substrates prior to the carbonization process in order to create a Si ...

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