AUB ScholarWorks

Browsing by Subject "Cytology"

Browsing by Subject "Cytology"

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  • Joshi R.V.; Kanj R.; Saroop S. (Institute of Electrical and Electronics Engineers Inc.; PISCATAWAY445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA, 2014)
    Novel 9T-8T SRAM cell designs are demonstrated using a fully functional 75-kb L1-cache compatible interleaved hardware based design in 45 nm SOI. An integrated read stack, together with an asymmetrical precharge topology, ...
  • Joshi R.V.; Kanj R.; Saroop S. (Institute of Electrical and Electronics Engineers Inc.; PISCATAWAY445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA, 2014)
    Novel 9T-8T SRAM cell designs are demonstrated using a fully functional 75-kb L1-cache compatible interleaved hardware based design in 45 nm SOI. An integrated read stack, together with an asymmetrical precharge topology, ...
  • Rowat A.C.; Jaalouk D.E.; Zwerger M.; Ung W.L.; Eydelnant I.A.; Olins D.E.; Olins A.L.; Herrmann H.; Weitz D.A.; Lammerding J. (, 2013)
    Neutrophils are characterized by their distinct nuclear shape, which is thought to facilitate the transit of these cells through pore spaces less than one-fifth of their diameter. We used human promyelocytic leukemia (HL-60) ...
  • Tabassum H.; Yilmaz F.; Dawy Z.; Alouini M.S. (, 2011)
    In this paper, we introduce a new methodology to model the uplink inter-cell interference (ICI) in wireless cellular networks. The model takes into account both the effect of channel statistics (i.e., path loss, shadowing, ...
  • Tabassum H.; Yilmaz F.; Dawy Z.; Alouini M.S. (, 2011)
    In this paper, we introduce a new methodology to model the uplink inter-cell interference (ICI) in wireless cellular networks. The model takes into account both the effect of channel statistics (i.e., path loss, shadowing, ...
  • Kerber P.; Kanj R.; Joshi R.V. (PISCATAWAY445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA, 2013)
    Impact of strained silicon effects in double-gated FinFET structures on static random access memory (SRAM) cell functionality is presented. Three FinFET silicon-on-insulator (SOI) SRAM cell embodiments representing unstrained, ...
  • Kerber P.; Kanj R.; Joshi R.V. (PISCATAWAY445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA, 2013)
    Impact of strained silicon effects in double-gated FinFET structures on static random access memory (SRAM) cell functionality is presented. Three FinFET silicon-on-insulator (SOI) SRAM cell embodiments representing unstrained, ...

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