dc.contributor.author |
Wex B. |
dc.contributor.author |
Kaafarani B.R. |
dc.contributor.author |
Schroeder R. |
dc.contributor.author |
Majewski L.A. |
dc.contributor.author |
Grell M. |
dc.contributor.author |
Neckers D.C. |
dc.contributor.editor |
Bao Z.Gundlach D.J. |
dc.date |
2005 |
dc.date.accessioned |
2017-10-03T15:45:35Z |
dc.date.available |
2017-10-03T15:45:35Z |
dc.date.issued |
2005 |
dc.identifier |
10.1117/12.613111 |
dc.identifier.isbn |
|
dc.identifier.issn |
|
dc.identifier.uri |
http://hdl.handle.net/10938/12736 |
dc.description.abstract |
The field-effect mobility in two isomers of thieno[f,f′]bis[1] benzothiophene was studied as a function of structure. Both regioisomers exhibit substantial mobilities up to 0.12 cm-2-Vs, a value that is at most one order of magnitude lower than the best known organic transistors based on silicon dioxide gate insulators. The devices based on these materials exhibit another phenomenon, namely a shift in the threshold voltage during operation. This shift differs from usually observed threshold voltage changes in amount and irreversibility. In this paper, we present possible explanations for the observed behavior. |
dc.format.extent |
|
dc.format.extent |
Pages: (1-7) |
dc.language |
English |
dc.relation.ispartof |
Publication Name: Proceedings of SPIE - The International Society for Optical Engineering; Conference Title: Organic Field-Effect Transistors IV; Conference Date: 31 July 2005 through 2 August 2005; Conference Location: San Diego, CA; Publication Year: 2005; Volume: 5940; Pages: (1-7); |
dc.relation.ispartofseries |
|
dc.relation.uri |
|
dc.source |
Scopus |
dc.subject.other |
|
dc.title |
Isomer-pure synthesis and preparation of FET using thieno[f,f′]bis[1] benzothiophene (syn, anti) |
dc.type |
Conference Paper |
dc.contributor.affiliation |
Wex, B., Center for Photochemical Sciences, 132 Overman Hall, Bowling Green, OH 43403, United States |
dc.contributor.affiliation |
Kaafarani, B.R., Department of Chemistry, American University of Beirut, Beirut, Lebanon |
dc.contributor.affiliation |
Schroeder, R., Department of Physics, University of Sheffield, Houndsfield Road, Sheffield, S3 7RH, United Kingdom |
dc.contributor.affiliation |
Majewski, L.A., Department of Physics, University of Sheffield, Houndsfield Road, Sheffield, S3 7RH, United Kingdom |
dc.contributor.affiliation |
Grell, M., Department of Physics, University of Sheffield, Houndsfield Road, Sheffield, S3 7RH, United Kingdom |
dc.contributor.affiliation |
Neckers, D.C., Center for Photochemical Sciences, 132 Overman Hall, Bowling Green, OH 43403, United States |
dc.contributor.authorAddress |
Neckers, D.C.; Center for Photochemical Sciences, 132 Overman Hall, Bowling Green, OH 43403, United States; email: neckers@photo.bgsu.edu |
dc.contributor.authorCorporate |
University: American University of Beirut; Faculty: Faculty of Arts and Sciences; Department: Chemistry; |
dc.contributor.authorDepartment |
Chemistry |
dc.contributor.authorDivision |
|
dc.contributor.authorEmail |
|
dc.contributor.faculty |
Faculty of Arts and Sciences |
dc.contributor.authorInitials |
|
dc.contributor.authorOrcidID |
|
dc.contributor.authorReprintAddress |
|
dc.contributor.authorResearcherID |
|
dc.contributor.authorUniversity |
American University of Beirut |
dc.description.cited |
|
dc.description.citedCount |
1 |
dc.description.citedTotWOSCount |
|
dc.description.citedWOSCount |
|
dc.format.extentCount |
7 |
dc.identifier.articleNo |
594004 |
dc.identifier.coden |
PSISD |
dc.identifier.pubmedID |
|
dc.identifier.scopusID |
31744432160 |
dc.identifier.url |
|
dc.publisher.address |
|
dc.relation.ispartofConference |
Conference Title: Organic Field-Effect Transistors IV : Conference Date: 31 July 2005 through 2 August 2005 , Conference Location: San Diego, CA. |
dc.relation.ispartofConferenceCode |
66473 |
dc.relation.ispartofConferenceDate |
31 July 2005 through 2 August 2005 |
dc.relation.ispartofConferenceHosting |
|
dc.relation.ispartofConferenceLoc |
San Diego, CA |
dc.relation.ispartofConferenceSponsor |
SPIE - The International Society for Optical Engineering |
dc.relation.ispartofConferenceTitle |
Organic Field-Effect Transistors IV |
dc.relation.ispartofFundingAgency |
|
dc.relation.ispartOfISOAbbr |
|
dc.relation.ispartOfIssue |
|
dc.relation.ispartOfPart |
|
dc.relation.ispartofPubTitle |
Proceedings of SPIE - The International Society for Optical Engineering |
dc.relation.ispartofPubTitleAbbr |
Proc SPIE Int Soc Opt Eng |
dc.relation.ispartOfSpecialIssue |
|
dc.relation.ispartOfSuppl |
|
dc.relation.ispartOfVolume |
5940 |
dc.source.ID |
|
dc.type.publication |
Series |
dc.subject.otherAuthKeyword |
Isomer-pure |
dc.subject.otherAuthKeyword |
Mobility |
dc.subject.otherAuthKeyword |
OFET |
dc.subject.otherAuthKeyword |
Organic transistor |
dc.subject.otherAuthKeyword |
Thieno[f,f′]bis[1]benzothiophene |
dc.subject.otherChemCAS |
|
dc.subject.otherIndex |
Aromatic compounds |
dc.subject.otherIndex |
Electric insulators |
dc.subject.otherIndex |
Isomers |
dc.subject.otherIndex |
Silica |
dc.subject.otherIndex |
Synthesis (chemical) |
dc.subject.otherIndex |
Threshold voltage |
dc.subject.otherIndex |
Isomer-pure |
dc.subject.otherIndex |
Organic transistors |
dc.subject.otherIndex |
Regioisomers |
dc.subject.otherIndex |
Gates (transistor) |
dc.subject.otherKeywordPlus |
|
dc.subject.otherWOS |
|