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The average capacitor current method for delay calculation in MOS circuits

Show simple item record Kayssi A.I.
dc.contributor.editor 2004 2017-10-04T11:07:33Z 2017-10-04T11:07:33Z 2004
dc.identifier 10.1109/TE.2004.825219
dc.identifier.issn 00189359
dc.description.abstract The transient response of metal-oxide-semiconductor (MOS) gates is a topic covered in most textbooks on digital integrated circuits and very-large-scale-integration (VLSI) design. One method often used to calculate first-order estimates of gate delays is the average capacitor current method. Using this method, the delay is calculated assuming that the capacitor current is constant and equal to the average of the capacitor current values at the limits of the time interval of interest. In this paper, this method is discussed and compared with other methods of delay calculation using integration and curve-fitting techniques familiar to electrical and computer engineering students. Since the computation of the capacitor current is relatively complicated because it requires the calculation of the MOS transistor currents, for propagation delay calculation there is no benefit in calculating the capacitor current twice. A single current calculation, corresponding to the familiar midpoint integration method, is sufficient to get the same or better accuracy as that of the average capacitor current method. The two-point Gauss quadrature formula is shown to provide excellent results with two capacitor current evaluations. © 2004 IEEE.
dc.format.extent Pages: (330-339)
dc.language English
dc.publisher PISCATAWAY
dc.relation.ispartof Publication Name: IEEE Transactions on Education; Publication Year: 2004; Volume: 47; no. 3; Pages: (330-339);
dc.source Scopus
dc.title The average capacitor current method for delay calculation in MOS circuits
dc.type Article
dc.contributor.affiliation Kayssi, A.I., Dept. of Elec. and Comp. Engineering, American University of Beirut, IEEE, Beirut 1107-2020, Lebanon
dc.contributor.authorAddress Kayssi, A.I.; Dept. of Elec. and Comp. Engineering, American University of Beirut, IEEE, Beirut 1107-2020, Lebanon; email:
dc.contributor.authorCorporate University: American University of Beirut; Faculty: Faculty of Engineering and Architecture; Department: Electrical and Computer Engineering;
dc.contributor.authorDepartment Electrical and Computer Engineering
dc.contributor.authorFaculty Faculty of Engineering and Architecture
dc.contributor.authorInitials Kayssi, AI
dc.contributor.authorReprintAddress Kayssi, AI (reprint author), Amer Univ Beirut, Dept Elect and Comp Engn, Beirut 11072020, Lebanon.
dc.contributor.authorUniversity American University of Beirut
dc.description.cited Bisdounis L, 1998, IEEE J SOLID-ST CIRC, V33, P302, DOI 10.1109-4.658636; BROCCO LM, 1988, IEEE T COMPUT AID D, V7, P1237, DOI 10.1109-43.16802; BURNS JR, 1964, RCA REV, V25, P627; Conte S. D., 1980, ELEMENTARY NUMERICAL; Daga JM, 1999, IEEE J SOLID-ST CIRC, V34, P42, DOI 10.1109-4.736655; FABRICIUS ED, 1990, INTRO VLSI DESIGN; HEATH M., 1997, SCI COMPUTING INTRO; HEDENSTIERNA N, 1987, IEEE T COMPUT AID D, V6, P270, DOI 10.1109-TCAD.1987.1270271; Hodges D. A., 1988, ANAL DESIGN DIGITAL; HOWE RT, MICROELECTRONICS INT; Kang S., 1999, CMOS DIGITAL INTEGRA; KAYSSI AI, 1992, IEEE T CIRCUITS-I, V39, P42, DOI 10.1109-81.109241; Rabaey J., 1996, DIGITAL INTEGRATED C; Sedra A.S., 1998, MICROELECTRONIC CIRC; Spencer R., 2003, INTRO ELECT CIRCUIT; Tuinenga P. W., 1995, SPICE GUIDE CIRCUIT
dc.description.citedCount 1
dc.description.citedTotWOSCount 1
dc.description.citedWOSCount 1
dc.format.extentCount 10
dc.identifier.coden IEEDA
dc.identifier.scopusID 4344613556
dc.publisher.address 445 HOES LANE, PISCATAWAY, NJ 08855 USA
dc.relation.ispartOfISOAbbr IEEE Trans. Educ.
dc.relation.ispartOfIssue 3
dc.relation.ispartofPubTitle IEEE Transactions on Education
dc.relation.ispartofPubTitleAbbr IEEE Trans Educ
dc.relation.ispartOfVolume 47
dc.source.ID WOS:000223299500004
dc.type.publication Journal
dc.subject.otherIndex Curve fitting
dc.subject.otherIndex Digital integrated circuits
dc.subject.otherIndex Electric currents
dc.subject.otherIndex Electrical engineering
dc.subject.otherIndex Gates (transistor)
dc.subject.otherIndex Integration
dc.subject.otherIndex MOS capacitors
dc.subject.otherIndex Students
dc.subject.otherIndex Teaching
dc.subject.otherIndex VLSI circuits
dc.subject.otherIndex Average capacitor current method
dc.subject.otherIndex Delay effects
dc.subject.otherIndex Switching time calculation
dc.subject.otherIndex MOSFET devices
dc.subject.otherWOS Education, Scientific Disciplines
dc.subject.otherWOS Engineering, Electrical and Electronic

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