A Best Balance Ratio Ordered Feature Selection Methodology for Robust and Fast Statistical Analysis of Memory Designs

dc.contributor.authorShaer, Lama
dc.contributor.authorKanj, Rouwaida N.
dc.contributor.authorJoshi, Rajiv V.
dc.contributor.departmentDepartment of Electrical and Computer Engineering
dc.contributor.facultyMaroun Semaan Faculty of Engineering and Architecture (MSFEA)
dc.contributor.institutionAmerican University of Beirut
dc.date.accessioned2025-01-24T11:31:06Z
dc.date.available2025-01-24T11:31:06Z
dc.date.issued2023
dc.description.abstractRecently, machine learning yield models for integrated circuit (IC) have gained widespread prominence in the EDA community, and are very promising in terms of emulating memory design functionality and thereby speeding up circuit simulation-based variance reduction methods. A main challenge that arises in this area is a class imbalance that occurs naturally due to the high targeted manufacturing yield. Thus, the imbalanced nature of the sampled memory datasets can compromise the model performance. In this work, we attain deep insights into the memory classification problem for modeling rare fail events in the context of importance sampling-based yield analysis. We propose a comprehensive and computationally efficient method that addresses the joint considerations of the best combination of relevant features and class balance ratios, which are key for classifier generalization capability. The methodology relies on synthetic minority over-sampling techniques to enforce the minority class while probing for the best data balance ratio in conjunction with an iterative $L_{1}$ -SVM-based approach that qualifies as an approximation to the $L_{0}$ -norm regularization for the best feature subset selection. We compare the proposed methodology against standalone $L_{1}$ -SVM solutions, unbalanced $L_{0}$ -norm approximation as well as an algorithmic data balancing method in the context of yield estimation methodology. The methodology is shown to result in high fidelity classifiers as demonstrated when analyzing the yield of a 14-nm FinFET SRAM cross-section with speedup of $179\times $ for the importance sampling simulations compared to pure circuit simulation-based approaches and an average error of $0.19 \sigma $. © 1982-2012 IEEE.
dc.identifier.doihttps://doi.org/10.1109/TCAD.2022.3213762
dc.identifier.eid2-s2.0-85139865872
dc.identifier.urihttp://hdl.handle.net/10938/27528
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.ispartofIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
dc.sourceScopus
dc.subjectData balancing
dc.subjectImportance sampling
dc.subjectRegularization
dc.subjectSupport vector machine (svm)
dc.subjectSynthetic minority over-sampling technique (smote)
dc.subjectYield
dc.subjectCircuit simulation
dc.subjectFeature selection
dc.subjectIntegrated circuits
dc.subjectIterative methods
dc.subjectMosfet devices
dc.subjectStatic random access storage
dc.subjectTiming circuits
dc.subjectFeatures extraction
dc.subjectIntegrated circuit modeling
dc.subjectMachine-learning
dc.subjectMontecarlo methods
dc.subjectRegularisation
dc.subjectSmote
dc.subjectSupport vectors machine
dc.subjectSvm
dc.subjectYield estimation
dc.subjectSupport vector machines
dc.titleA Best Balance Ratio Ordered Feature Selection Methodology for Robust and Fast Statistical Analysis of Memory Designs
dc.typeArticle

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