Amplification in Light Energy Conversion at Q-CdTe Sensitized TiO2 Photonic Crystal, Photoelectrochemical Stability in Se2- Electrolyte, and Size-Dependent Type II Q-CdTe/CdSe Formation

dc.contributor.authorNehme, Ali S.
dc.contributor.authorHaydous, Fatima
dc.contributor.authorHalaoui, Lara I.
dc.contributor.departmentDepartment of Chemistry
dc.contributor.facultyFaculty of Arts and Sciences (FAS)
dc.contributor.institutionAmerican University of Beirut
dc.date.accessioned2025-01-24T11:21:49Z
dc.date.available2025-01-24T11:21:49Z
dc.date.issued2016
dc.description.abstractThis study investigates the ability of Se2- redox electrolyte to separate the photoholes and stabilize Q-CdTe quantum dot solar cell with a liquid junction. We examined the photophysical and photoelectrochemical behaviors of Q-CdTe in two sizes, green-emitting dots of 2.3-2.7 nm diameter and red-emitting dots of 4 nm diameter, in the presence of alkaline Se2- electrolyte prepared under inert atmosphere. Photoelectrochemical, absorbance, emission and emission quenching measurements revealed the presence of size dependence in Se2- surface binding to Q-CdTe, growth of type II Q-CdTe/CdSe, and stability in the photoelectrochemical cell. Emission quenching measurements show that Se2- scavenges the Q-CdTe photohole, with mechanisms that depended on size and quencher concentration. Binding of Se2- to green-emitting Q-CdTe occurred with a greater binding constant compared to the red-emitting dots, resulting in formation of type II Q-CdTe/CdSe at the smaller core indicated in red-shifted absorbance and emission spectra with incremental Se2- addition at room temperature. Photoelectrochemical measurements acquired at Q-CdTe sensitized nc-TiO2 and TiO2 inverse opal with a stop band at 600 nm, 600-i-TiO2-o, in Se2- electrolyte confirmed this redox species ability to scavenge the photohole and to protect Q-CdTe against fast photoanodic dissolution, with greater stability observed for the larger dots. Gains in the photon-to-current conversion efficiency attributed to light trapping were measured at Q-CdTe sensitized 600-i-TiO2-o relative to nc-TiO2. © 2016 American Chemical Society.
dc.identifier.doihttps://doi.org/10.1021/acs.jpcc.5b11478
dc.identifier.eid2-s2.0-84960878409
dc.identifier.urihttp://hdl.handle.net/10938/25336
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.relation.ispartofJournal of Physical Chemistry C
dc.sourceScopus
dc.subjectBinding energy
dc.subjectBins
dc.subjectElectrochemistry
dc.subjectElectrolytes
dc.subjectEmission spectroscopy
dc.subjectEnergy conversion
dc.subjectLight
dc.subjectPhotoelectrochemical cells
dc.subjectQuenching
dc.subjectSemiconductor quantum dots
dc.subjectTitanium dioxide
dc.subjectEmission quenching
dc.subjectLight energy conversion
dc.subjectPhotoelectrochemical behavior
dc.subjectPhotoelectrochemical measurements
dc.subjectPhotoelectrochemicals
dc.subjectPhoton-to-current conversion efficiency
dc.subjectQuantum dot solar cells
dc.subjectQuencher concentration
dc.subjectCadmium telluride
dc.titleAmplification in Light Energy Conversion at Q-CdTe Sensitized TiO2 Photonic Crystal, Photoelectrochemical Stability in Se2- Electrolyte, and Size-Dependent Type II Q-CdTe/CdSe Formation
dc.typeArticle

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