Quantum-confined CdTe films deposited by SILAR and their photoelectrochemical stability in the presence of Se2- as a hole scavenger

dc.contributor.authorHaydous, Fatima
dc.contributor.authorHalaoui, Lara I.
dc.contributor.departmentDepartment of Chemistry
dc.contributor.facultyFaculty of Arts and Sciences (FAS)
dc.contributor.institutionAmerican University of Beirut
dc.date.accessioned2025-01-24T11:21:42Z
dc.date.available2025-01-24T11:21:42Z
dc.date.issued2014
dc.description.abstractQuantum-confined CdTe films were deposited by successive ionic layer adsorption and reaction (SILAR) on nc-TiO2 and on a conducting oxide electrode (FTO) from aqueous solutions of Cd2+ and Te2- prepared in situ under inert atmosphere. The films were characterized with UV-visible absorption, SEM, EDX, and XRD. CdTen films exhibited a zinc-blende structure and a red-shift in absorbance with increasing SILAR cycles (n) consistent with quantum size effects and featured either a mesoporous morphology on FTO or followed the contours of the titania nanoparticles on nc-TiO2 films. The films' photoelectrochemical behavior was studied in the presence of Se2- compared to S2- as hole scavengers. The incident-photon-to-current conversion efficiency reached ca. 16% at 460 nm and 9% at 500 nm at CdTe10/nc-TiO2 in alkaline Se2- electrolyte compared to 1% at 460 nm or 0.5% at 500 nm in S 2-. CdTe10 films examined after acquiring a photoaction spectrum in Se2- still exhibited zinc-blende structure, EDX analysis showed Cd and Te peaks and no detectable Se, and the absorbance slightly increased with films remaining red-black. On the other hand, the absorbance edge and photocurrent onset shifted significantly to the blue and the films became yellow during the same measurement in S2-, indicating dissolution and formation of CdS, consistent with reports for CdTe single crystals and Q-CdTe. After hours of illumination at 500 nm at -0.55 V in Se2-, Se became incorporated in the films; however, the photocurrent decreased by only 5-8% after 2-3 h illumination, indicating significant photoelectrochemical stability. The results are attributed to effective quenching of the anodic dissolution of CdTe by Se2- scavenging the hole, and a slow growth of a protective overlayer possibly of CdTe1-xSex that does not block photocurrent generation, in contrast to the behavior of CdTe in sulfide electrolyte. © 2014 American Chemical Society.
dc.identifier.doihttps://doi.org/10.1021/jp503971r
dc.identifier.eid2-s2.0-84906281423
dc.identifier.urihttp://hdl.handle.net/10938/25278
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.relation.ispartofJournal of Physical Chemistry C
dc.sourceScopus
dc.subjectCadmium sulfide
dc.subjectDissolution
dc.subjectElectrochemistry
dc.subjectElectrolytes
dc.subjectScavenging
dc.subjectTitanium dioxide
dc.subjectZinc sulfide
dc.subjectConducting oxide electrodes
dc.subjectPhotocurrent generations
dc.subjectPhotoelectrochemical behavior
dc.subjectPhotoelectrochemicals
dc.subjectSuccessive ionic layer adsorption and reactions
dc.subjectTitania nano-particles
dc.subjectUv-visible absorption
dc.subjectZinc-blende structures
dc.subjectCadmium telluride
dc.titleQuantum-confined CdTe films deposited by SILAR and their photoelectrochemical stability in the presence of Se2- as a hole scavenger
dc.typeArticle

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