Bob B.P.; Kohno A.; Charnvanichborikarn S.; Warrender J.M.; Umezu I.; Tabbal M.; Williams J.S.; Aziz M.J.
(MELVILLECIRCULATION and FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA, 2010)
Topographically flat, single crystal silicon supersaturated with the chalcogens S, Se, and Te was prepared by ion implantation followed by pulsed laser melting and rapid solidification. The influences of the number of laser ...