Kerber P.; Kanj R.; Joshi R.V.
(PISCATAWAY445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA, 2013)
Impact of strained silicon effects in double-gated FinFET structures on static random access memory (SRAM) cell functionality is presented. Three FinFET silicon-on-insulator (SOI) SRAM cell embodiments representing unstrained, ...