AUB ScholarWorks

Browsing by Author "k_pranita@us.ibm.com"

Browsing by Author "k_pranita@us.ibm.com"

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  • Kerber P.; Kanj R.; Joshi R.V. (PISCATAWAY445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA, 2013)
    Impact of strained silicon effects in double-gated FinFET structures on static random access memory (SRAM) cell functionality is presented. Three FinFET silicon-on-insulator (SOI) SRAM cell embodiments representing unstrained, ...

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