AUB ScholarWorks

Browsing by Subject "A1: Doping"

Browsing by Subject "A1: Doping"

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  • Soueidan M.; Ferro G.; Nsouli B.; Roumie M.; Habka N.; Souliere V.; Bluet J.-M.; Kazan M. (AMSTERDAMPO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, 2011)
    VLS mechanism was used for growing boron doped homoepitaxial SiC layers on 4H-SiC(0 0 0 1) 8° off substrate. Si-based melts were fed by propane in the temperature range 14501500 °C. Two main approaches were studied to ...

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