Ottaviani L.; Kazan M.; Biondo S.; Tuomisto F.; Milesi F.; Duchaine J.; Torregrosa F.; Palais O.
(, 2012)
A comparison is made between two kinds of nitrogen implantations for the formation of thin n+p junctions in p-type silicon carbide (SiC) epitaxial layers. The standard beam ion implantations and PULSIONTM processes were ...