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Effect of process parameters on the mechanical properties of carbon nitride thin films synthesized by plasma assisted pulsed laser deposition

Tabbal M.; Merel P.; Chaker M. (2004)
Infrared analysis of the effect of Ge at the interface between 3C-SiC and Si

Kazan M.; Tabbal M.; Masri P. (LAUSANNE, 2012)
Graphitic nanoclustering in pulsed laser deposited diamond-like-carbon and carbon nitride thin films

Tabbal M.; Christidis T.; Isber S.; El Khakani M.A.; Merel P.; Chaker M. (LAUSANNE, 2004)
Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy

Rahbany N.; Kazan M.; Tabbal M.; Tauk R.; Jabbour J.; Brault J.; Damilano B.; Massies J. (MELVILLE, 2013)
Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Umezu I.; Warrender J.M.; Charnvanichborikarn S.; Kohno A.; Williams J.S.; Tabbal M.; Papazoglou D.G.; Zhang X.-C.; Aziz M.J. (MELVILLE, 2013)
Crystal-field investigations and magnetic properties of Nd 3+-doped Bi 4Si 3O 12

Isber S.; Tabbal M.; Christidis T.; Charar S.; Terki F.; Ishii M. (COLLEGE PK, 2005)
Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Tabbal M.; Kim T.; Woolf D.N.; Shin B.; Aziz M.J. (NEW YORK, 2010)
Superconducting properties of Tl-2223 phase substituted by iron

Isber S.; Awad R.; Tabbal M.; Abou-Aly A.I.; Nsouli B.; Zahraman K.; Mansour A.; Farj A. (BRISTOL, 2006)
Point defect engineered Si sub-bandgap light-emitting diodes

Bao J.; Charnvanichborikarn S.; Yang Y.; Tabbal M.; Shin B.; Wong-Leung J.; Williams J.S.; Aziz M.J.; Capasso F. (2008)
Temperature dependence of the electron paramagnetic resonance of unhydrogenated carbon nitride

Christidis T.; Tabbal M.; Isber S.; Rizk S. (LAUSANNE, 2004)

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