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Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide - by Aurore Joseph Said
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| dc.contributor.author | Said, Aurore Joseph |
| dc.date.accessioned | 2012-06-13T07:08:27Z |
| dc.date.available | 2012-06-13T07:08:27Z |
| dc.date.issued | 2004 |
| dc.identifier.uri | http://hdl.handle.net/10938/6747 |
| dc.description | Thesis (M.S.)--Dept. of Physics, AUB, 2004.;"Advisor: Dr. Malek Tabbal, Associate Professor, Physics--Member of Committee: Dr. Theodore Christidis, Associate Professor, Physics--Member of Committee: Dr. Samih Isber, Associate Professor, Physics" |
| dc.description | Bibliography: leaves 64-68. |
| dc.description.abstract | Silicon carbide thin films are deposited on Si( 100) substrates by ablating a Si C polycrystalline target in vacuum using a focused high power KrF excimer laser. The effect of deposition temperature and laser intensity on the microstructure of the films i |
| dc.format.extent | x, 68 leaves : ill. 30 cm. |
| dc.language.iso | eng |
| dc.relation.ispartof | Theses, Dissertations, and Projects |
| dc.subject.classification | T:004513 AUBNO |
| dc.subject.lcsh | Pulsed laser deposition |
| dc.subject.lcsh | Silicon carbide |
| dc.subject.lcsh | Amorphous substances |
| dc.subject.lcsh | Thin films |
| dc.title | Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide - by Aurore Joseph Said |
| dc.type | Thesis |
| dc.contributor.department | American University of Beirut. Faculty of Arts and Sciences. Department of Physics |
