dc.contributor.author |
Nazer, Anis Musa |
dc.date.accessioned |
2012-06-13T07:09:18Z |
dc.date.available |
2012-06-13T07:09:18Z |
dc.date.issued |
2005 |
dc.identifier.uri |
http://hdl.handle.net/10938/7041 |
dc.description |
Thesis (M.E.)--American University of Beirut, Department of Electrical and Computer Engineering, 2005.;"Advisor: Dr. Ali Chehab, Assistant Professor, Electrical and Computer Engineering--Member of Committee: Dr. Ayman Kayssi, Professor, Electrical and Com |
dc.description |
Bibliography: leaves 88-93. |
dc.description.abstract |
Transient current (iDDT) refers to the current drawn from the power supply durin g the transient switching of CMOS gates. Testing based on the transient current can detect many of the defects that can occur in ICs, such as resistive opens, w hich may not |
dc.format.extent |
xiii, 93 leaves : ill. 30 cm. |
dc.language.iso |
eng |
dc.relation.ispartof |
Theses, Dissertations, and Projects |
dc.subject.classification |
ET:004688 AUBNO |
dc.subject.lcsh |
Metal oxide semiconductors, Complementary |
dc.title |
Evaluation of dynamic current testing for CMOS domino circuits - by Anis Musa Nazer |
dc.type |
Thesis |
dc.contributor.department |
American University of Beirut. Faculty of Engineering and Architecture. Department of Electrical and Computer Engineering |