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DRV computing circuit : a novel technique to measure the data retention voltage of large SRAM arrays - by Farah Bassam Yahya.

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dc.contributor.author Yahya, Farah Bassam.
dc.date.accessioned 2012-06-13T07:35:38Z
dc.date.available 2012-06-13T07:35:38Z
dc.date.issued 2011
dc.identifier.uri http://hdl.handle.net/10938/8692
dc.description Thesis (M.E.)--American University of Beirut, Department of Electrical and Computer Engineering, 2011.;"Advisor : Dr. Mohammad Mansour, Associate Professor, Department of Electrical and Computer Engineering--Members of Committee : Dr. Ayman Kayssi, Profes
dc.description Includes bibliographical references (leaves 109-111)
dc.description.abstract In modern microprocessors, memory occupies the largest area on chip and accounts for the most power consumption. This trend is bound to increase as transistor sizes continue to scale down with every technology node, raising concerns about increased power
dc.format.extent xiii, 111 leaves : ill. 30 cm.
dc.language.iso eng
dc.relation.ispartof Theses, Dissertations, and Projects
dc.subject.classification ET:005563 AUBNO
dc.subject.lcsh Integrated circuits -- Reliability.
dc.subject.lcsh Digital integrated circuits.
dc.subject.lcsh Low voltage integrated circuits.
dc.title DRV computing circuit : a novel technique to measure the data retention voltage of large SRAM arrays - by Farah Bassam Yahya.
dc.type Thesis
dc.contributor.department American University of Beirut. Faculty of Engineering and Architecture. Department of Electrical and Computer Engineering.


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