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Electron paramagnetic resonance investigation of the nanostructure of unhydrogenated silicon carbide thin films - by Elias Ghandour Hannoun

Electron paramagnetic resonance investigation of the nanostructure of unhydrogenated silicon carbide thin films - by Elias Ghandour Hannoun

Hannoun, Elias Ghandour
URI: http://hdl.handle.net/10938/7371
Date: 2006

Abstract:

This work consists of an investigation of the effect of deposition temperature, ranging from 400 to 950 degrees C, and post-deposition annealing at 1100 degrees C on the paramagnetic centers in SiC thin films grown by Pulsed Laser Depositio n. The study w

Description:

 
Thesis (M.S.)--American University of Beirut, Dept. of Physics, 2006.;"Advisor: Dr. Malek Tabbal, Associate Professor, Department of Physics--Member of Committee: Dr. Mazen El Ghoul, Associate Professor, Department of Chemistry--Member of Committee: Dr. T
 
Bibliography: leaves 66-70.
 

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