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Electron paramagnetic resonance investigation of the nanostructure of unhydrogenated silicon carbide thin films - by Elias Ghandour Hannoun
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| dc.contributor.author | Hannoun, Elias Ghandour |
| dc.date.accessioned | 2012-06-13T07:10:23Z |
| dc.date.available | 2012-06-13T07:10:23Z |
| dc.date.issued | 2006 |
| dc.identifier.uri | http://hdl.handle.net/10938/7371 |
| dc.description | Thesis (M.S.)--American University of Beirut, Dept. of Physics, 2006.;"Advisor: Dr. Malek Tabbal, Associate Professor, Department of Physics--Member of Committee: Dr. Mazen El Ghoul, Associate Professor, Department of Chemistry--Member of Committee: Dr. T |
| dc.description | Bibliography: leaves 66-70. |
| dc.description.abstract | This work consists of an investigation of the effect of deposition temperature, ranging from 400 to 950 degrees C, and post-deposition annealing at 1100 degrees C on the paramagnetic centers in SiC thin films grown by Pulsed Laser Depositio n. The study w |
| dc.format.extent | xii, 70 leaves : ill. 30 cm. |
| dc.language.iso | eng |
| dc.relation.ispartof | Theses, Dissertations, and Projects |
| dc.subject.classification | T:004843 AUBNO |
| dc.subject.lcsh | Electron paramagnetic resonance |
| dc.subject.lcsh | Nanostructured materials |
| dc.subject.lcsh | Silicon carbide |
| dc.subject.lcsh | Thin films |
| dc.title | Electron paramagnetic resonance investigation of the nanostructure of unhydrogenated silicon carbide thin films - by Elias Ghandour Hannoun |
| dc.type | Thesis |
| dc.contributor.department | American University of Beirut. Faculty of Arts and Sciences. Department of Physics |
